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Influence of the Characteristics of the STM-tip on the Electroluminescence Spectra

We analyze the influence of the characteristics of the STM-tip (applied voltage, tip radius) on the electroluminescence spectra from an STM-tip-induced quantum dot taking into account the many-body effects. We find that positions of electroluminescence peaks, attributed to the electron-hole recombination in the quantum dot, are very sensitive to the shape and size of the confinement potential as determined by the tip radius and the applied voltage. A critical value of the tip radius is found, at which the luminescence peak positions as a function of the tip radius manifest a transition from decreasing behavior for smaller radii to increasing behavior for larger radii. We find that this critical value of the tip radius is related to the confinement in the lateral and normal direction.Comment: 15 pages, 5 figure

Exchange interaction in p-type GaAs/Al_{x}Ga_{1-x}As heterostructures studied by magnetotransport

Low-temperature magnetotransport experiments have been performed on a p-type GaAs/AlxGa1-xAs quantum well. From activation measurements on Shubnikov–de Haas conduction minima it was found that exchange interactions can be of great importance for both odd and even filling factors and strongly influence the observed periodicity. Furthermore, it was found that the temperature dependence of Shubnikov–de Haas oscillations in the low-magnetic-field regime could not be explained within a single-particle model based on a solution of the full Luttinger Hamiltonian in a magnetic field. Numerical simulations of Shubnikov–de Haas spectra, based on a model that treats hole exchange interactions in a simplified manner, show unambiguously that exchange driven enhancement of hole "spin" splittings are extremely important at magnetic fields as low as 1.5 T. Also, the inclusion of a valence-band warping in the calculations is shown to be essential. Qualitatively, most experimental observations could be described within the presented model. Our results imply that, in any hole system, the effective masses obtained from temperature-dependent SdH measurements are to be treated with extreme care as they can deviate from their single-particle value by as much as a factor of 2

Dimensionality of charge transport in organic field-effect transistors

Application of a gate bias to an organic field-effect transistor leads to accumulation of charges in the organic semiconductor within a thin region near the gate dielectric. An important question is whether the charge transport in this region can be considered two-dimensional, or whether the possibility of charge motion in the third dimension, perpendicular to the accumulation layer, plays a crucial role. In order to answer this question we have performed Monte Carlo simulations of charge transport in organic field-effect transistor structures with varying thickness of the organic layer, taking into account all effects of energetic disorder and Coulomb interactions. We show that with increasing thickness of the semiconductor layer the source-drain current monotonically increases for weak disorder, whereas for strong disorder the current first increases and then decreases. Similarly, for a fixed layer thickness the mobility may either increase or decrease with increasing gate bias. We explain these results by the enhanced effect of state filling on the current for strong disorder, which competes with the effects of Coulomb interactions and charge motion in the third dimension. Our conclusion is that apart from the situation of a single monolayer, charge transport in an organic semiconductor layer should be considered three-dimensional, even at high gate bias

Exchange-correlation energy of a hole gas including valence band coupling

We have calculated an accurate exchange-correlation energy of a hole gas, including the complexities related to the valence band coupling as occurring in semiconductors like GaAs, but excluding the band warping. A parametrization for the dependence on the density and the ratio between light- and heavy-hole masses is given. We apply our results to a hole gas in an AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well and calculate the two-dimensional band structure and the band-gap renormalization. The inclusion of the valence band coupling in the calculation of the exchange-correlation potentials for holes and electrons leads to a much better agreement between theoretical and experimental data than when it is omitted

Scaling Of The Coulomb Energy Due To Quantum Fluctuations In The Charge Of A Quantum Dot

The charging energy of a quantum dot is measured through the effect of its potential on the conductance of a second dot. This technique allows a measurement of the scaling of the dot's charging energy with the conductance of the tunnel barriers leading to the dot. We find that the charging energy scales quadratically with the reflection probability of the barriers. In a second experiment we study the transition from a single to a double-dot which exhibits a scaling behavior linear in the reflection probability. The observed power-laws agree with a recent theory.Comment: 5 pages, uuencoded and compressed postscript file, with figure

Contactless charge carrier mobility measurement in organic field-effect transistors

With the increasing performance of organic semiconductors, contact resistances become an almost fundamental problem, obstructing the accurate measurement of charge carrier mobilities. Here, a generally applicable method is presented to determine the true charge carrier mobility in an organic field-effect transistor (OFET). The method uses two additional finger-shaped gates that capacitively generate and probe an alternating current in the OFET channel. The time lag between drive and probe can directly be related to the mobility, as is shown experimentally and numerically. As the scheme does not require the injection or uptake of charges it is fundamentally insensitive to contact resistances. Particularly for ambipolar materials the true mobilities are found to be substantially larger than determined by conventional (direct current) schemes

Photoluminescence investigations of 2D hole Landau levels in p-type single Al_{x}Ga_{1-x}As/GaAs heterostructures

We study the energy structure of two-dimensional holes in p-type single Al_{1-x}Ga_{x}As/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a new numerical procedure and a good agreement is achieved. Additional lines observed in the energy range of free-carrier recombinations are attributed to excitonic transitions. We also consider the role of many-body effects in photoluminescence spectra.Comment: 13 pages, 10 figures, accepted to Physical Review